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| 2SK2393 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features * * * * * Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK2393 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 20 8 20 8 200 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 -- -- 2.0 -- 1.8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.9 3.0 4370 560 200 75 180 260 125 0.9 6.5 Max -- 1 500 4.0 2.8 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V s I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF / dt = 100 A / s Test Conditions I D = 10 mA, VGS = 0*1 VGS = 20 V, VDS = 0 VDS = 1200 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 15 V*1 ID = 4 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK2393 Power vs. Temperature Derating 400 Pch (W) I D (A) 100 30 10 3 DC Maximum Safe Operation Area 300 10 PW Op era 10 0 s Channel Dissipation Drain Current 200 =1 1m 0m Tc s s ho Operation in 1 this area is limited by R DS(on) tio n( s( 1s 100 =2 5 t) 0.3 C) 0 50 100 150 Tc (C) 200 Case Temperature 0.1 Ta = 25 C 20 50 100 200 500 1000 2000 Drain to Source Voltage V DS (V) Typical Output Characteristics 10 Pulse Test I D (A) (A) 8 15 V 10 V 8V 6 7V 4 5 Typical Transfer Characteristics V DS = 10 V Pulse Test ID Drain Current Drain Current 3 4 6V 2 VGS = 5 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 2 Tc = 75C 25C -25C 1 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 3 2SK2393 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 20 Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 10 5 VGS = 10 V 15 V 1 0.5 0.2 0.1 16 Drain to Source Voltage 12 ID=5A 8 2A 1A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 2 4 0.3 1 3 Drain Current 10 30 I D (A) 100 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 5 ID=5A Pulse Test 4 2A 1A 3 V GS = 15 V Forward Transfer Admittance vs. Drain Current 10 5 Tc = -25 C 2 25 C 1 0.5 75 C 2 1 0.2 0.1 0.1 V DS = 20 V Pulse Test 0.2 0.5 1 2 5 10 0 -40 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 4 2SK2393 Body to Drain Diode Reverse Recovery Time 50 Reverse Recovery Time trr (s) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 20 10 5 2 1 0.5 0.1 di/dt = 100 A/s V GS = 0, Ta = 25C 0.3 1 Reverse Drain Current 3 10 I DR (A) 3000 1000 Coss 300 100 30 10 0 Crss VGS = 0 f = 1 MHz 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) ID=8A 800 V GS (V) 1000 20 2000 1000 Switching Time t (ns) 500 Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % t d(off) tf tr t d(on) 16 VDS V DD = 250 V 400 V 600 V Drain to Source Voltage 600 VGS 12 Gate to Source Voltage 200 100 50 400 8 200 V DD = 250 V 400 V 600 V 80 40 120 160 Gate Charge Qg (nc) 4 0 200 0 20 0.1 0.2 0.5 1 Drain Current 2 5 I D (A) 10 5 2SK2393 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 10 V 5V 8 6 V GS = 0, -5 V 4 2 0 0.2 0.4 0.6 0.8 V SD (V) 1.0 Source to Drain Voltage Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 6 Unit: mm 6.0 0.2 5.0 0.2 3.3 0.2 20.0 0.3 26.0 0.3 20.0 0.6 2.5 0.3 1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2 5.45 0.5 3.8 7.4 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL -- -- 9.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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